À l'heure actuelle, le système de production d'énergie photovoltaïque de la Chine est principalement un système à courant continu, qui consiste à charger l'énergie électrique générée par la batterie solaire, et la batterie alimente directement la charge. For example, the solar household lighting system in Northwest China and the microwave station power supply system far away from the grid are all DC system. This type of system has a simple structure and low cost. However, due to the different load DC voltages (such as 12V, 24V, 48V, etc.), it is difficult to achieve standardization and compatibility of the system, especially for civilian power, as most of the AC loads are used with DC power . It is difficult for the photovoltaic power supply to supply electricity to enter the market as a commodity. In addition, photovoltaic power generation will eventually achieve grid-connected operation, which must adopt a mature market model. In the future, AC photovoltaic power generation systems will become the mainstream of photovoltaic power generation.
The main circuits of the above-mentioned inverters all need to be realized by a control circuit. Generally, there are two control methods: square wave and positive and weak wave. The inverter power supply circuit with square wave output is simple, low in cost, but low in efficiency and large in harmonic components. . Sine wave output is the development trend of inverters. With the development of microelectronics technology, microprocessors with PWM functions have also come out. Therefore, the inverter technology for sine wave output has matured.
onduleurest très important. Currently, the most used power components include Darlington power transistors (BJT), power field effect transistors (MOS-F ET), insulated gate transistors (IGB). T) and turn-off thyristor (GTO), etc., the most used devices in small-capacity low-voltage systems are MOS FET, because MOS FET has lower on-state voltage drop and higher The switching frequency of IG BT is generally used in high-voltage and large-capacity systems. This is because the on-state resistance of MOS FET increases with the increase of voltage, and IG BT is in Medium-capacity systems occupies a greater advantage, while in super-large-capacity (above 100 kVA) systems, GTOs are generally used as power components.
Heure de publication : 21 octobre 2021
